CRAM-ER: Error-Resilient Spintronic Computational Random Access Memory for Scalable In-Memory Computation 事件
PRODUCT_LAUNCH2026-06-03影响: MEDIUM
CRAM-ER: Error-Resilient Spintronic Computational Random Access Memory for Scalable In-Memory Computation arXiv:2606.02781v1 Announce Type: cross Abstract: Deep neural networks (DNNs) have achieved state-of-the-art performance across diverse domains. However, typical Von Neumann compute paradigms face severe memory bottlenecks. Emerging near-memory and compute-in-memory approaches alleviate this but incur significant peripheral overhead. Computational Random Access Memory (CRAM) based on MRAM e