High-<i>Q</i> wet-etched GaAs microdisks containing InAs quantum boxes 论文

摘要

A two-steps wet-etching fabrication process producing high-quality GaAs microdisks is presented. We report an optical characterization of these microdisks, using the photoluminescence of InAs quantum boxes as an internal light source. Thanks to an improved smoothness of the microdisk sidewall, cavity Q’s as high as 12 000 are observed, which opens very challenging novel application prospects for semiconductor microdisks.