Phase-Change Technology and the Future of Main Memory 论文

详细信息

发表期刊/会议

IEEE Micro

发表日期

2010-01-01

发表年份

2010

摘要

Phase-change may enable continued scaling of main memories, but PCM has higher access latencies, incurs higher power costs, and wears out more quickly than DRAM. This article discusses how to mitigate these limitations through buffer sizing, row caching, write reduction, and wear leveling, to make PCM a viable dream alternative for scalable main memories.