Condensation of Indirect Excitons in Coupled AlAs/GaAs Quantum Wells 论文

1994Physical Review Letters引用 371
Semiconductor Quantum Structures and DevicesQuantum and electron transport phenomenaQuantum Information and Cryptography

摘要

The photoluminescence of excitons confined in an electric field tunable coupled AlAs/GaAs quantum well has been investigated at $T\ensuremath{\ge}350$ mK and magnetic fields $H\ensuremath{\le}14$ T. In the indirect regime where electrons and holes are separated both in real and in $k$ space, the magnetic field was found to result in (i) a strong change of both the photoluminescence intensity and decay time which is attributed to anomalies in the exciton transport and (ii) an appearance of a huge broad band noise in the photoluminescence intensity which is evidence for exciton condensation.

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