A 28 nm Configurable Memory (TCAM/BCAM/SRAM) Using Push-Rule 6T Bit Cell Enabling Logic-in-Memory 论文

2016IEEE Journal of Solid-State Circuits引用 333
DOI
VLSI and Analog Circuit TestingAdvanced Memory and Neural ComputingNetwork Packet Processing and Optimization
Network Packet Processing and OptimizationAdvanced Memory and Neural ComputingVLSI and Analog Circuit Testing
相关技术:Advanced Memory and Neural ComputingNetwork Packet Processing and Optimization
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A 28 nm Configurable Memory (TCAM/BCAM/SRAM) Using Push-Rule 6T Bit Cell Enabling Logic-in-Memory · 相关文章

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