Magnetic Skyrmion as a Nonlinear Resistive Element: A Potential Building Block for Reservoir Computing 论文

2018Physical Review Applied引用 292
Advanced Memory and Neural ComputingNeural Networks and Reservoir ComputingMagnetic properties of thin films

摘要

The topologically protected magnetic textures called skyrmions may provide a suitable basis for $r\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}s\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}r\phantom{\rule{0}{0ex}}v\phantom{\rule{0}{0ex}}o\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}r$ $c\phantom{\rule{0}{0ex}}o\phantom{\rule{0}{0ex}}m\phantom{\rule{0}{0ex}}p\phantom{\rule{0}{0ex}}u\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}g$, one approach to brain-inspired cognitive computing. Reservoirs of self-organized skyrmions offer potential advantages in size, efficiency, and complexity, compared to systems of memristive devices, quantum-dot lasers, and atomic switches. The basic element here is an isolated skyrmion in a ferromagnetic ribbon; thus the authors examine current flow through magnetic skyrmions based on anisotropic magnetoresistance, analyzing the nonlinear current-voltage characteristics. The scheme they provide offers a path to spintronic neuromorphic computing.