Ferroelectric ternary content-addressable memory for one-shot learning 论文

2019Nature Electronics引用 372
DOI
Ferroelectric and Negative Capacitance DevicesAdvanced Memory and Neural ComputingDomain Adaptation and Few-Shot Learning
Domain Adaptation and Few-Shot LearningAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
相关技术:Advanced Memory and Neural ComputingDomain Adaptation and Few-Shot Learning
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Ferroelectric ternary content-addressable memory for one-shot learning · 作者

S

Siddharth Joshi

S

Suman Datta

X

Xiaobo Sharon Hu

M

Michael Niemier

S

Sven Beyer

J

Johannes Müller

M

Martin Trentzsch

S

Stefan Dünkel

A

Ann Franchesca Laguna

X

Xunzhao Yin

K

Kai Ni