Review of: "_ Lindemann's change structure section in electrical nanostructures Lindemann change / (change structure) in multilayer nanostructures" 论文

摘要

To solve this problem , they usually use an intermediate layer of retarding materials such as Ta, w or Mo as a penetration barrier to improve the thermal stability of the Si/Cu layer . In the characterization of Si/Ta/Cu nanoparticles and multilayer systems, there is an effect of negative bias voltage on the improvement of the electrical and structural properties of the permeation barrier of the Ta sputtering layer in the Si/Ta system. Surface processes of the Si layer, including burning, are carried out by plasma and ion beam technology. This kind of integrated circuits with their unique characteristics in the nanometer scale have various applications of mesoscopic systems.