Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage 论文
2002IEEE Journal of Solid-State Circuits引用 724
Low-power high-performance VLSI designSemiconductor materials and devicesVLSI and Analog Circuit Testing
详细信息
- 发表期刊/会议
- IEEE Journal of Solid-State Circuits
- 发表日期
- 2002-11-01
- 发表年份
- 2002
关键词
Low-power high-performance VLSI designSemiconductor materials and devicesVLSI and Analog Circuit Testing
摘要
Bidirectional adaptive body bias (ABB) is used to compensate for die-to-die parameter variations by applying an optimum pMOS and nMOS body bias voltage to each die which maximizes the die frequency subject to a power constraint. Measurements on a 150 nm CMOS test chip which incorporates on-chip ABB, show that ABB reduces variation in die frequency by a factor of seven, while improving the die acceptance rate. An enhancement of this technique, that compensates for within-die parameter variations as well, increases the number of dies accepted in the highest frequency bin. ABB is therefore shown to provide bin split improvement in the presence of increasing process parameter variations.