Destructive single-event effects in semiconductor devices and ICs 论文
2003IEEE Transactions on Nuclear Science引用 265
Radiation Effects in ElectronicsIntegrated Circuits and Semiconductor Failure AnalysisVLSI and Analog Circuit Testing
摘要
Developments in the field of destructive single-event effects over the last 40 years are reviewed. Single-event latchup, single-event burnout, single-event gate rupture, and single-event snap-back are discussed beginning with the first observation of each effect, its phenomenology, and the development of present day understanding of the mechanisms involved.