The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 论文

2018IEEE Transactions on Nuclear Science引用 218
DOI
Radiation Effects in ElectronicsVLSI and Analog Circuit TestingSemiconductor materials and devices
VLSI and Analog Circuit TestingRadiation Effects in ElectronicsSemiconductor materials and devices
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The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose · 作者

Q

Qi Guo

J

Jiaqi Liu

C

Chengfa He

X

Xue‐Feng Yu

H

Hongxia Guo

W

Wu Lu

J

Jiangwei Cui

Q

Qiwen Zheng